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PRELIMINARY
Am29F400AT/AM29F400AB
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
DISTINCTIVE CHARACTERISTICS
s 5.0 V 10% for read and write operations -- Minimizes system level power requirements s Compatible with JEDEC-standards -- Pinout and software compatible with single-power-supply flash -- Superior inadvertent write protection s Package options -- 44-pin SO -- 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance -- 60 ns maximum access time s Sector erase architecture -- One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes -- Any combination of sectors can be erased. Also supports full chip erase. s Sector protection -- Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment. s Embedded EraseTM Algorithms -- Automatically preprograms and erases the chip or any sector s Embedded ProgramTM Algorithms -- Automatically programs and verifies data at specified address s Data Polling and Toggle Bit feature for detection of program or erase cycle completion s Ready/Busy output (RY/BY) -- Hardware method for detection of program or erase cycle completion s Erase Suspend/Resume -- Supports reading data from a sector not being erased s Low power consumption -- 20 mA typical active read current for Byte Mode -- 28 mA typical active read current for Word Mode -- 30 mA typical program/erase current s Enhanced power management for standby mode -- 1 A typical standby current s Boot Code Sector Architecture -- T = Top sector -- B = Bottom sector s Hardware RESET pin -- Resets internal state machine to the read mode
5.0 V-only Flash
GENERAL DESCRIPTION
The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0-DQ7 or 16 bits on DQ0-DQ15. The Am29F400A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. 12.0 Volt VPP is not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard Am29F400A offers access times of 60 ns, 70 ns, 90 ns, 120 ns and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE) and output enable (OE) controls. The Am29F400A is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry.
Publication# 20380 Rev: B Amendment/0 Issue Date: April 1997
This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice.
PRELIMINARY Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 Volt Flash or EPROM devices. The Am29F400A is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. This device also features a sector erase architecture. This allows for sectors of memory to be erased and reprogrammed without affecting the data contents of other sectors. A sector is typically erased and verified within 1.5 seconds. The Am29F400A is erased when shipped from the factory. The Am29F400A device also features hardware sector protection. This feature will disable both program and erase operations in any combination of eleven sectors of memory. AMD has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from a sector that was not being erased. Thus, true background erase can be achieved. The device features single 5.0 Volt power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transitions. The end of program or erase is detected by the RY/BY pin. Data Polling of DQ7, or by the Toggle Bit (DQ6). Once the end of a program or erase cycle has been completed, the device automatically resets to the read mode. The Am29F400A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm will be terminated. The internal state machine will then be reset into the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device will be automatically reset to the read mode and will have erroneous data stored in the address locations being operated on. These locations will need rewriting after the Reset. Resetting the device will enable the system's microprocessor to read the boot-up firmware from the Flash memory. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The Am29F400A memory electrically erases all b i t s w i t h i n a s e c t o r s i mu l t a n e o u s l y v i a Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection.
Flexible Sector-Erase Architecture
s One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbyte sectors s Individual-sector or multiple-sector erase capability s Sector protection is user definable
(x8) SA10 SA9 SA8 SA7 SA6 SA5 SA4 SA3 SA2 SA1 SA0 16 Kbyte 8 Kbyte 8 Kbyte 32 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 6FFFFh 37FFFh 5FFFFh 2FFFFh 4FFFFh 27FFFh 3FFFFh 1FFFFh 2FFFFh 17FFFh 1FFFFh 0FFFFh 0FFFFh 07FFFh 00000h 00000h
20380B-1
(x16)
7FFFFh 3FFFFh 7BFFFh 3DFFFh 79FFFh 3CFFFh 77FFFh 3BFFFh
Am29F400AT Sector Architecture
(x8) SA10 SA9 SA8 SA7 SA6 SA5 SA4 SA3 SA2 SA1 SA0 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 64 Kbyte 32 Kbyte 8 Kbyte 8 Kbyte 16 Kbyte 05FFFh 02FFFh 03FFFh 01FFFh 00000h 00000h
20380B-2
(x16)
7FFFFh 3FFFFh 6BFFFh 37FFFh 5FFFFh 2FFFFh 4FFFFh 27FFFh 3FFFFh 1FFFFh 2FFFFh 17FFFh 1FFFFh 0FFFFh 0FFFFh 07FFFh 07FFFh 03FFFh
AM29F400AB Sector Architecture 2 Am29F400AT/AM29F400AB
PRELIMINARY
PRODUCT SELECTOR GUIDE
Family Part No: Ordering Part No:VCC = 5.0 V 5% VCC = 5.0 V 10% Max Access Time (ns) CE (E) Access (ns) OE (G) Access (ns) 60 60 30 -65 -70 70 70 30 -90 90 90 35 -120 120 120 50 -150 150 150 55 Am29F400A
BLOCK DIAGRAM
5.0 V-only Flash
DQ0-DQ15 VCC VSS RY/BY Buffer RY/BY Erase Voltage Generator Input/Output Buffers
WE BYTE RESET
State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic STB Data Latch
CE OE
STB VCC Detector Timer Address Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A17 A-1
20380B-3
Am29F400AT/AM29F400AB
3
PRELIMINARY
CONNECTION DIAGRAMS
SO
NC RY/BY A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
20380B-4
4
Am29F400AT/AM29F400AB
PRELIMINARY
CONNECTION DIAGRAMS
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0
20380B-5
5.0 V-only Flash
Standard TSOP
A16 BYTE VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RESET NC NC RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1
20380B-6
Reverse TSOP
Am29F400AT/AM29F400AB
5
PRELIMINARY
PIN CONFIGURATION
A1, A0-A17 = 18 Addresses BYTE CE = Selects 8-bit or 16-bit mode = Chip Enable
LOGIC SYMBOL
A-1 18 A0-A17 DQ0-DQ15 CE (E) OE (G) WE (W) RESET BYTE RY/BY
20380B-7
DQ0-DQ15 = 16 Data Inputs/Outputs NC OE RESET RY/BY VSS VSS WE = Pin Not Connected Internally = Output Enable = Hardware Reset Pin, Active Low = Ready/Busy Output = +5.0 Volt Single-Power Supply (10% for -90, -120, -150) or (5% for -75) = Device Ground = Write Enable
16 or 8
6
Am29F400AT/AM29F400AB
PRELIMINARY
ORDERING INFORMATION Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
AM29F400A
T
-65
E
C
B OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to +85C) PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) F = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048) S = 44-Pin Small Outline Package (SO 044) SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector
5.0 V-only Flash
DEVICE NUMBER/DESCRIPTION Am29F400A 4 Megabit (512K x 8-Bit/256K x 16-Bit) CMOS Flash Memory 5.0 Volt-only Program and Erase
Valid Combinations Valid Combinations AM29F400AT/B-65 AM29F400AT/B-70 AM29F400AT/B-90 AM29F400AT/B-120 AM29F400AT/B-150 EC, EI, EE, EEB, FC, FI, FE, FEB, SC, SI, SE, SEB EC, EI, FC, FI, SC, SI Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations.
Am29F400AT/AM29F400AB
7
PRELIMINARY Table 1.
Operation Autoselect, AMD Manuf. Code (Note 1) Autoselect Device Code (Note 1) Read Standby Output Disable Write Verify Sector Protect (Note 2) Temporary Sector Unprotect Hardware Reset
Am29F400A User Bus Operations (BYTE = VIH)
CE L L L H L L L X X OE L L L X H H L X X WE H H H X H L H X X A0 L H A0 X X A0 L X X A1 L L A1 X X A1 H X X A6 L L A6 X X A6 L X X A9 VID VID A9 X X A9 VID X X DQ0-DQ15 Code Code DOUT HIGH Z HIGH Z DIN Code X HIGH Z RESET H H H H H H H VID L
Table 2.
Operation Autoselect, AMD Manuf. Code (Note 1) Autoselect Device Code (Note 1) Read Standby Output Disable Write Verify Sector Protect (Note 2) Temporary Sector Unprotect Hardware Reset CE L L L H L L L X X
Am29F400A User Bus Operations (BYTE = VIL)
OE L L L X H H L X X WE H H H X H L H X X A0 L H A0 X X A0 L X X A1 L L A1 X X A1 H X X A6 L L A6 X X A6 L X X A9 VID VID A9 X X A9 VID X X DQ0-DQ7 DQ8-DQ15 RESET Code Code DOUT HIGH Z HIGH Z DIN Code X HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z HIGH Z H H H H H H H VID L
Legend: L = logic 0, H = logic 1, X = Don't Care. See Characteristics for voltage levels. Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4. 2. Refer to the section on Sector Protection.
Read Mode
The Am29F400A has two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins (as-
suming the addresses have been stable for at least tACC-tOE time).
Standby Mode
There are two ways to implement the standby mode on the Am29F400A device, both using the CE pin. A CMOS standby mode is achieved with the CE input held at VCC 0.5 V. Under this condition the current is typically reduced to less than 5 A. A TTL standby mode is achieved with the CE pin held at VIH. Under this condition the current is typically reduced to 1 mA. In the standby mode the outputs are in the high impedance state, independent of the OE input.
8
Am29F400AT/AM29F400AB
PRELIMINARY
Output Disable
With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state.
Am29F400A is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 4 (see Autoselect Command Sequence). Byte 0 (A0 = VIL) represents the manufacturer's code (AMD=01H) and byte 1 (A0 = VIH) the device identifier code (Am29F400AT = 23H and AM29F400AB = ABH for x8 mode; Am29F400AT = 2223H and AM29F400AB = 22ABH for x16 mode). These two bytes/words are given in the table below. All identifiers for manufacturer and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the Autoselect, A1 must be V IL (see Tables 3 and 4). The autoselect mode also facilitates the determination of sector protection in the system. By performing a read operation at the address location XX02H with the higher order address bits A12-A17 set to the desired sector address, the device will return 01H for a protected sector and 00H for a non-protected sector.
Autoselect
The autoselect mode allows the reading of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All addresses are don't cares except A0, A1, and A6 (see Table 3). The manufacturer and device codes may also be read via the command register, for instances when the Table 3.
Type Manufacturer Code-AMD Byte Am29F400AT Word Am29F400A Device Byte AM29F400AB Word Sector Protection Sector Address X X
5.0 V-only Flash
Am29F400A Sector Protection Verify Autoselect Codes
A12-A17 X A6 VIL VIL A1 VIL VIL A0 VIL VIH Code (HEX) 01H 23H 2223H ABH VIL VIL VIL VIH VIH VIL 22ABH 01H*
*Outputs 01H at protected sector addresses
Table 4.
Type Manufacturer Code-AMD Code 01H DQ 15 0
Expanded Autoselect Code Table
DQ 14 0 DQ 13 0 DQ 12 0 DQ 11 0 DQ 10 0 DQ 9 0 DQ DQ DQ DQ DQ DQ DQ DQ DQ 8 7 6 5 4 3 2 1 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 1 1 0 1 1 1 1 1 1
Am29F400A Device
A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z Am29F400AT(B) 23H (W) 2223H 0 0 1 0 0 0 1 0 AM29F400AB(B) ABH A-1 HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z HI-Z (W) 22ABH 0 0 1 0 0 0 1 0 01H 0 0 0 0 0 0 0 0
Sector Protection
B) - Byte mode (W) - Word mode
Am29F400AT/AM29F400AB
9
PRELIMINARY Table 5.
A17 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 0 0 0 0 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 1 1 1
Sector Address Tables (Am29F400AT)
A14 X X X X X X X 0 1 1 1 A13 X X X X X X X X 0 0 1 A12 X X X X X X X X 0 1 X (x8) Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-77FFFh 78000h-79FFFh 7A000h-7BFFFh 7C000h-7FFFFh (x16) Address Range 00000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3BFFFh 3C000h-3CFFFh 3D000h-3DFFFh 3E000h-3FFFFh
Table 6.
A17 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 0 0 0 0 0 0 0 1 1 1 1 A16 0 0 0 0 0 1 1 0 0 1 1 A15 0 0 0 0 1 0 1 0 1 0 1
Sector Address Tables (AM29F400AB)
A14 0 0 0 1 X X X X X X X A13 0 1 1 X X X X X X X X A12 X 0 1 X X X X X X X X (x8) Address Range 00000h-03FFFh 04000h-05FFFh 06000h-07FFFh 08000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh (x16) Address Range 00000h-01FFFh 02000h-02FFFh 03000h-03FFFh 04000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh 38000h-3FFFFh
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written to by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Protection
The Am29F400A features hardware sector protection. This feature will disable both program and erase operations in any combination of ten sectors of memory. The sector protect feature is enabled using programming equipment at the user's site. The device is shipped with all sectors unprotected. Alternatively, AMD may program and protect sectors in the factory prior to shipping the device (AMD's ExpressFlashTM Service).
10
Am29F400AT/AM29F400AB
PRELIMINARY It is possible to determine if a sector is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02H, where the higher order address bits A12-A17 is the desired sector address, will produce a logical "1" at DQ0 for a protected sector. See Table 3 for Autoselect codes. the RESET pin, all the previously protected sectors will be protected again. Refer to Figures 16 and 17.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. Table 7 defines the valid r e g i s t e r c o m m a n d s e q u e n c e s. N o t e t h a t t h e Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both Reset/Read commands are functionally equivalent, resetting the device to the read mode.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors of the Am29F400A device in order to change data in-system. The Sector Unprotect mode is activated by setting the RESET pin to high voltage (12V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the 12 V is taken away from
5.0 V-only Flash
Am29F400AT/AM29F400AB
11
PRELIMINARY Table 7.
Command Sequence Read/Reset Reset/Read Reset/ Read Word 3 Byte Word 3 AAAAH 5555H AAAAH 5555H 90H 01H 2223H (T Device ID) 22ABH (B Device ID) 23H (T Device ID) ABH (B Device ID) 00H 4 5555H AAH 2AAAH 55H AAAAH 6 5555H 5555H A0H AAAAH 5555H AAAAH 5555H AAAAH 80H 80H 5555H AAAAH 5555H AAAAH AAH AAH 2AAAH 55H 5555H 2AAAH 55H 5555H 5555H AAAAH SA 30H 10H PA 01H (T/B Manuf. ID) PD 5555H AAH 2AAAH 55H Bus Write Cycles Req'd 1 First Bus Write Cycle Addr Data
Am29F400A Command Definitions (Notes 1-7)
Second Bus Write Cycle Addr Data Third Bus Write Cycle Addr Data Fourth Bus Read/Write Cycle Addr Data Fifth Bus Write Cycle Addr Data Sixth Bus Write Cycle Addr Data
XXXXH F0H 5555H AAH 2AAAH 55H 5555H F0H RA RD
Autoselect
Byte
AAAAH
5555H
AAAAH
Word /Byte Word Program Byte Word Chip Erase Byte Sector Erase Word Byte 1 1 6 AAAAH 5555H 5555H AAH 2AAAH 55H AAAAH XXXXH B0H XXXXH 30H 5555H 5555H AAH 2AAAH 55H
Erase Suspend Erase Resume
Notes: 1. Bus operations are defined in Tables 1 and 2. 2. RA = Address of the memory location to be read. PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA = Address of the sector to be erased. The combination of A17-A12 will uniquely select any sector. 3. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of WE. 4. Reading from non-erasing sectors is allowed in the Erase Suspend mode. 5. Address bits A17-A15 are don't care for unlock and command cycles. 6. The system should generate the following address patterns: Word Mode: 5555H or 2AAAH to addresses A0-A14 Byte Mode: AAAAH or 5555H to addresses A-1-A14.
Read/Reset Command
The read or reset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered.
The device will automatically power-up in the read/ reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters.
12
Am29F400AT/AM29F400AB
PRELIMINARY
Autoselect Command
Flash memories are intended for use in applications where the local CPU can alter memory contents. As s u c h , m a nu f a c t u r e a n d d e v i c e c o d e s m u s t be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally a desirable system design practice. The device contains an autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 01H. A read cycle from address XX01H returns the device code (Am29F400AT = 23H and AM29F400AB = ABH for x8 mode; Am29F400AT = 2223H and AM29F400AB = 22ABH for x16 mode) (see Tables 3 and 4). All manufacturer and device codes will exhibit odd parity with DQ7 defined as the parity bit. Furthermore, the write protect status of sectors can be read in this mode. Scanning the sector addresses (A17, A16, A15, A14, A13, and A12) while (A6, A1, A0) = (0, 1, 0) will produce a logical "1" at device output DQ0 for a protected sector. To terminate the operation, it is necessary to write the read/reset command sequence into the register.
Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a hardware reset occurs during the programming operation, the data at that particular location will be corrupted. Programming is allowed in any sequence and across sector boundaries. Beware that a data "0" cannot be programmed back to a "1". Attempting to do so may cause the device to exceed programming time limits (DQ5 = 1) or result in an apparent success according to the data polling algorithm but a read from reset/read mode will show that the data is still "013". Only erase operations can convert "0"s to "1"s. Figure 1 illustrates the Embedded Programming Algori t h m u s i n g t y p i c a l c o m m a n d s t r i n g s a n d bus operations.
5.0 V-only Flash
Chip Erase
Chip erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "setup" command. Two more "unlock" write cycles are then followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. The erase is performed sequentially on all sectors at the same time (see Table "Erase and Programming Performance"). The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data on DQ7 is "1" (see Write Operation Status section) at which time the device returns to read the mode. Figure 1 illustrates the Embedded Erase Algorithm using typical command strings and bus operations.
Byte/Word Programming
The device is programmed on a byte-by-byte (or word-by-word) basis. Programming is a four bus cycle operation. There are two "unlock" write cycles. These are followed by the program setup command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming using the Embedded Program Algorithm. Upon executing the algorithm, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ7 (also used as Data Polling) is equivalent to the data written to this bit at which time the device returns to the read mode and addresses are no longer latched (see Table 8, Write Operation Status). Therefore, the device requires that a valid address to the device be supplied by the system at this particular instance of time for Data Polling operations. Data Polling must be performed at the memory location which is being programmed.
Sector Erase
Sector erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command. Two more "unlock" write cycles are then followed by the sector erase command. The sector a d d r e s s ( a ny a d d r e s s l o c a t i o n w i t h i n t h e desired sector) is latched on the falling edge of WE, while the command (30H) is latched on the rising edge of WE. After a time-out of 100 s from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased sequentially by writing the six bus cycle operations as described above. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be sequentially erased. The time between writes must be less than 100 s otherwise that command will not be
Am29F400AT/AM29F400AB
13
PRELIMINARY accepted and erasure will start. It is recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 100 s from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs within the 100 s time-out window the timer is reset. (Monitor DQ3 to determine if the sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend during this period will reset the device to the read mode, ignoring the previous command string. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for DQ3, Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to10). Sector erase does not require the user to program the device prior to erase. The device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The automatic sector erase begins after the 100 s time out from the rising edge of the WE pulse for the last sector erase command pulse and terminates when the data on DQ7, Data Polling, is "1" (see Write Operation Status section) at which time the device returns to the read mode. Data Polling must be performed at an address within any of the sectors being erased. Figure 1 illustrates the Embedded Erase Algorithm using typical command strings and bus operations.
Erase Suspend
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written duri n g t h e C h i p E ra s e o p e r a t i o n o r E m b e d d e d Program Algorithm. Writing the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Any other command written during the Erase Suspend m o d e w i l l b e i g n o r e d ex c e p t t h e E r a s e Resume command. Writing the Erase Resume command resumes the erase operation. The addresses are "don't-cares" when writing the Erase Suspend or Erase Resume command. When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 15 s to suspend the erase operation. When the device has entered the erase-suspended mode, DQ6 will stop toggling. The user must use the address of a sector being erased for reading DQ6 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be r e a d f r o m s e c t o r s t h a t h ave n o t b e e n erase-suspended. To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Write Operation Status
Table 8.
Status Auto-Programming In Progress Program/Erase in Auto-Erase Exceeded Time Limits Auto-Programming Program/Erase in Auto-Erase 0 DQ7 0 Toggle Toggle Toggle 0 1 1 1 0 1
Write Operation Status
DQ7 DQ7 DQ6 Toggle DQ5 0 DQ3 0
Notes: 1. D8-D15 = Don't Care for x16 mode. 2. DQ4 for AMD internal use only.
14
Am29F400AT/AM29F400AB
PRELIMINARY DQ7 Data Polling The Am29F400A device features Data Polling as a method to indicate to the host that the embedded algori t h m s a r e i n p r o gr e s s o r c o m p l e t e d . D u r i n g the Embedded Program Algorithm an attempt to read the device will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a "0" at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a "1" at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure 2. For chip erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase WE pulse. Data Polling must be performed at sector addresses within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Just prior to the completion of Embedded Algorithm operations DQ7 may change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte's valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operations and DQ7 has a valid data, the data outputs on DQ0-DQ6 may be still invalid. The valid data on DQ0-DQ7 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out (see Table 7). See Figure 10 for the Data Polling timing specifications and diagrams. DQ6 Toggle Bit The Am29F400A also features the "Toggle Bit" as a method to indicate to the host system that the embedded algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device at any address will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempt. During programming, the Toggle Bit is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase, the Toggle Bit is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. For Sector erase, the Toggle Bit is valid after the last rising edge of the sector erase WE pulse. The Toggle Bit is active during the sector time-out. Either CE or OE toggling will cause DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause DQ6 to toggle. See Figure 11 for the Toggle Bit timing specifications and diagrams. DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a "1". This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Table 1. The DQ5 failure condition will also appear if a user tries to program a 1 to a location that is previously programmed to 0. In this case the device locks out and never completes the Embedded Program Algorithm. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a "1." Please note that this is not a device failure condition since the device was incorrectly used. If this occurs, reset the device. DQ3 Sector Erase Timer After the completion of the initial sector erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial sector erase command sequence. If Data Polling or the Toggle Bit indicates the device has been written with a valid erase command, DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands (other than Erase Suspend) to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit. If DQ3 is low ("0"), the device will accept additional sector erase commands. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted. Refer to Table 8: Write Operation Status.
5.0 V-only Flash
Am29F400AT/AM29F400AB
15
PRELIMINARY
RY/BY
Ready/Busy The Am29F400A provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or have been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. When the RY/BY pin is low, the device will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the Am29F400A is placed in an Erase Suspend mode, the RY/BY output will be high. During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin should be ignored while RESET is at VIL. Refer to Figure 12 for a detailed timing diagram. Since this is an open-drain output, several RY/BYpins can be tied together in parallel with a pull-up resistor to VCC. RESET Hardware Reset The Am29F400A device may be reset by driving the RESET pin to VIL. The RESET pin must be kept low (VIL) for at least 500 ns. Any operation in progress will be terminated and the internal state machine will be reset to the read mode 20 s after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the device requires an additional 50 ns before it will allow read access. When the RESET pin is low, the device will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a program or erase operation, the data at that particular location will be indeterminate. The RESET pin may be tied to the system reset input. Therefore, if a system reset occurs during the Embedded Program or Erase Algorithm, the device will be automatically reset to read mode and this will enable the system's microprocessor to read the boot-up firmware from the Flash memory.
bit) mode. The data is read and programmed at DQ0-DQ15. When this pin is driven low, the device operates in byte (8 bit) mode. Under this mode, the DQ15/A-1 pin becomes the lowest address bit and DQ8-DQ14 bits are tri-stated. However, the command bus cycle is always an 8-bit operation and hence commands are written at DQ0-DQ7 and the DQ8-DQ15 bits are ignored. Refer to Figures 14 and 15 for the timing diagram.
Data Protection
The Am29F400A is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from V CC power-up and power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, the Am29F400A locks out write cycles for VCC < VLKO (see DC Characteristics section for voltages). When VCC < VLKO, the command register is d i s a bl e d , a l l i n t e r n a l p r o gra m / e ra s e c i r c u i t s are disabled, and the device resets to the read mode. The Am29F400A ignores all writes until VCC > VLKO. The user must ensure that the control pins are in the correct logic state when VCC > VLKO to prevent unintentional writes.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL,CE = VIH, or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up.
Byte/Word Configuration
The BYTE pin selects the byte (8-bit) mode or word (16 bit) mode for the Am29F400A device. When this pin is driven high, the device operates in the word (16
16
Am29F400AT/AM29F400AB
PRELIMINARY
EMBEDDED ALGORITHMS
Start
Write Program Command Sequence (see below)
Data Poll Device
Increment Address
No
5.0 V-only Flash
Last Address ? Yes
Programming Completed Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/Program Data
20380B-8
Figure 1.
Embedded Programming Algorithm
Am29F400AT/AM29F400AB
17
PRELIMINARY
EMBEDDED ALGORITHMS
Start Write Erase Command Sequence (see below) Data Polling or Toggle Bit Successfully Completed
Erasure Completed
Chip Erase Command Sequence (Address/Command):
Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): 5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
Sector Address/30H Additional sector erase commands are optional Sector Address/30H
20380B-9
Note: To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted.
Figure 2.
Embedded Erase Algorithm
18
Am29F400AT/AM29F400AB
PRELIMINARY
Start
Read Byte (DQ0-DQ7) Addr=VA
VA = Byte address for programming = any of the sector addresses within the sector being erased during sector erase operation = Valid address equals any non-protected sector group address during chip erase
Yes
DQ7=Data ? No No DQ5=1 ? Yes Read Byte (DQ0-DQ7) Addr=VA
5.0 V-only Flash
DQ7=Data ? No Fail
Yes
Pass
20380B-10
Note: DQ7 is rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5.
Figure 3.
Data Polling Algorithm
Am29F400AT/AM29F400AB
19
PRELIMINARY
Start
Read Byte (DQ0-DQ7) Addr=Don't Care
DQ6=Toggle ? Yes No DQ5=1 ? Yes Read Byte (DQ0-DQ7) Addr=Don't Care
No
DQ6=Toggle ? Yes Fail
No
Pass
20380B-11
Note: DQ6 is rechecked even if DQ5 = "1" because DQ6 may stop toggling at the same time as DQ5 changing to "1".
Figure 4.
Toggle Bit Algorithm
20 ns +0.8 V -0.5 V -2.0 V 20 ns
20 ns
20380B-12
Figure 5.
Maximum Negative Overshoot Waveform
20 ns
VCC + 2.0 V VCC + 0.5 V 2.0 V 20 ns 20 ns
20380B-13
Figure 6. 20
Maximum Positive Overshoot Waveform Am29F400AT/AM29F400AB
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Storage Temperature Plastic Packages . . . . . . . . . . . . . . . -65C to +125C Ambient Temperature with Power Applied. . . . . . . . . . . . . . -55C to +125C Voltage with Respect to Ground All pins except A9, OE and RESET (Note 1) . . . . . . . . . . . . . . . . . . . . . . . -2.0 V to +7.0 V VCC (Note 1). . . . . . . . . . . . . . . . . . . . -2.0 V to +7.0 V A9, OE, and RESET (Note 2). . . . . . -2.0 V to +13.0 V Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 7 and Figure 8. 2. Minimum DC input voltage on pins A9, OE, and RESET is -0.5 V. During voltage transitions, A9, OE, and RESET may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. See Figure 7 and Figure 8. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices Ambient Temperature (TA). . . . . . . . . . . . 0C to +70C Industrial (I) Devices Ambient Temperature (TA). . . . . . . . . . -40C to +85C Extended (E) Devices Ambient Temperature (TA). . . . . . . . . -55C to +125C VCC Supply Voltages VCC for Am29F400T/B-65, . . . . . . +4.75 V to +5.25 V VCC for Am29F400T/B-70, -90, -120, -150 . . . . . . . . . . . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
5.0 V-only Flash
Am29F400AT/AM29F400AB
21
PRELIMINARY
DC CHARACTERISTICS TTL/NMOS Compatible
Parameter Symbol ILI ILIT ILO ICC1 ICC2 ICC3 VIL VIH VID VOL VOH VLKO Parameter Description Input Load Current A9, OE, RESET Input Load Current Output Leakage Current VCC Active Read Current (Note 1) VCC Active Program/Erase Current (Notes 2, 3) VCC Standby Current Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage Output High Voltage Low VCC Lock-Out Voltage VCC = 5.0 V IOL = 5.8 mA, VCC = VCC Min IOH = -2.5 mA, VCC = VCC Min 2.4 3.2 4.2 Test Conditions VIN = VSS to VCC, VCC = VCC Max VCC = VCC Max, A9, OE, RESET = 12.5 V VOUT = VSS to VCC, VCC = VCC Max Byte CE = VIL, OE = VIH CE = VIL, OE = VIH VCC = VCC Max, CE = VIH, OE = VIH -0.5 2.0 11.5 Word Min Max 1.0 50 1.0 40 mA 50 60 1.0 0.8 VCC + 0.5 12.5 0.45 mA mA V V V V V V Unit A A A
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Program or Erase Algorithm is in progress. 3. Not 100% tested.
22
Am29F400AT/AM29F400AB
PRELIMINARY
DC CHARACTERISTICS (continued) CMOS Compatible
Parameter Symbol ILI ILIT ILO ICC1 ICC2 ICC3 VIL VIH VID VOL VOH1 VOH2 VLKO Low VCC Lock-Out Voltage Parameter Description Input Load Current A9, OE, RESET Input Load Current Output Leakage Current Test Conditions VIN = VSS to VCC, VCC = VCC Max VCC = VCC Max, A9, OE, RESET = 12.5 V VOUT = VSS to VCC, VCC = VCC Max Byte VCC Active Read Current (Note 1) CE = VIL, OE = VIH VCC Active Program/Erase Current (Notes 2, 3) VCC Standby Current (Note 4) Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage VCC = 5.0 V IOL = 5.8 mA, VCC = VCC Min IOH = -2.5 mA, VCC = VCC Min IOH = -100 A, VCC = VCC Min 0.85 VCC VCC -0.4 3.2 4.2 CE = VIL, OE = VIH VCC = VCC Max, CE = VIH, OE = VIH -0.5 0.7 x VCC 11.5 Word 20 28 30 1 Min Typ Max 1.0 50 1.0 40 mA 50 Unit A A A
5.0 V-only Flash
50 5 0.8 VCC + 0.3 12.5 0.45
mA A V V V V V V V
Output Low Voltage
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 6 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH. 2. ICC active while Embedded Program or Erase Algorithm is in progress. 3. Not 100% tested. 4. ICC3 = 20 A max at extended temperatures (> +85C).
Am29F400AT/AM29F400AB
23
PRELIMINARY
AC CHARACTERISTICS Read-Only Operations Characteristics
Parameter Symbols JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Standard Description tRC tACC tCE tOE tDF tDF tOH tReady tELFL tELFH Read Cycle Time (Note 4) Address to Output Delay CE = VIL OE = VIL Test Setup Min Max Max Max Max Max Min Max Max -65 60 60 60 30 20 20 0 20 5 Speed Option (Notes 1 and 2) -70 70 70 70 30 20 20 0 20 5 -90 90 90 90 35 20 20 0 20 5 -120 120 120 120 50 30 30 0 20 5 -150 150 150 150 55 35 35 0 20 5 Unit ns ns ns ns ns ns ns s ns
Chip Enable to Output Delay OE = VIL Output Enable to Output Delay Chip Enable to Output High Z (Notes 3, 4) Output Enable to Output High Z (Notes 3, 4) Output Hold Time From Addresses, CE or OE, Whichever Occurs First RESET Pin Low to Read Mode (Note 4) CE to BYTE Switching Low or High
Notes: 1. Test Conditions (for -65 only) Output Load: 1 TTL gate and 30 pF Input Rise and Fall Times: 5 ns Input Pulse Levels:0.0 V to 3.0 V Timing Measurement Reference Level: 1.5 V input and output 2. Test Conditions (for -70, -90, -120, -150) Output Load: 1 TTL gate and 100 pF Input Rise and Fall Times: 20 ns Input Pulse Levels: 0.45 V to 2.4 V Timing Measurement Reference Level: 0.8 V and 2.0 V input and output 3. Output Driver Disable Time 4. Not 100% tested.
5.0 V IN3064 or Equivalent
2.7 k
Device Under Test CL
6.2 k
IN3064 or Equivalent
IN3064 or Equivalent
Notes: For -65: CL = 30 pF including jig capacitance For all others: CL = 100 pF including jig capacitance
IN3064 or Equivalent
20380B-14
Figure 7.
Test Conditions
24
Am29F400AT/AM29F400AB
PRELIMINARY
AC CHARACTERISTICS Write (Erase/Program) Operations
Parameter Symbols JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Standard tWC tAS tAH tDS tDH tOEH Description Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Hold Time Read (Note 2) Toggle and Data Polling (Note 2) Min Min Min Min Min Min Min Min Min Min Min Min Byte tWHWH1 tWHWH1 Programming Operation Word Sector Erase Operation (Note 1) Max VCC Setup Time (Note 2) Rise Time to VID (Notes 2, 3) OE Setup Time to WE Active (Notes 2, 3) RESET Pulse Width BYTE Switching Low to Output High Z (Notes 3, 4) Program/Erase Valid to RY/BY Delay (Note 2) RESET Setup Time to WE Active Min Min Min Min Max Min Min 8 50 500 4 500 20 30 4 8 50 500 4 500 20 30 4 8 50 500 4 500 30 35 4 8 50 500 4 500 30 50 4 8 50 500 4 500 30 55 4 sec s ns s ns ns ns s Typ Typ tWHWH2 tWHWH2 tVCS tVIDR tOESP tRP tFLQZ tBUSY tRESSP 14 1.0 14 1.0 14 1.0 14 1.0 14 1.0 Typ -65 60 0 45 30 0 0 10 0 0 0 35 20 7 Speed Option (Notes 1 and 2) -70 70 0 45 30 0 0 10 0 0 0 35 20 7 -90 90 0 45 45 0 0 10 0 0 0 45 20 7 -120 120 0 50 50 0 0 10 0 0 0 50 20 7 -150 150 0 150 50 0 0 10 0 0 0 50 20 7 Unit ns ns ns ns ns ns ns ns ns ns ns ns s s sec
5.0 V-only Flash
tGHWL tELWL tWHEH tWLWH tWHDL
tGHWL tCS tCH tWP tWPH
Read Recovery Time Before Write (OE High to WE Low) CE Setup Time CE Hold Time Write Pulse Width Write Pulse Width High
Notes: 1. This does not include the preprogramming time. 2. Not 100% tested. 3. These timings are for Temporary Sector Unprotect operation. 4. Output Driver Disable Time.
Am29F400AT/AM29F400AB
25
PRELIMINARY
KEY TO SWITCHING WAVEFORMS
WAVEFORM INPUTS Must Be Steady May Change from H to L May Change from L to H Don't Care, Any Change Permitted Does Not Apply OUTPUTS Will Be Steady Will Be Changing from H to L Will Be Changing from L to H Changing, State Unknown Center Line is HighImpedance "Off" State KS000010
SWITCHING WAVEFORMS
tRC Addresses tACC Addresses Stable
CE tOE OE tOEH (tDF)
WE (tCE) (tOH) High Z High Z
Outputs
Output Valid
20380B-15
Figure 8.
AC Waveforms for Read Operations
26
Am29F400AT/AM29F400AB
PRELIMINARY
SWITCHING WAVEFORMS
3rd Bus Cycle Addresses 5555H tWC CE tGHWL OE tWP WE tCS tWPH tDH Data tDS 5.0 V tCE
20380B-16
Data Polling PA tAS tAH PA tRC
tWHWH1
5.0 V-only Flash
tOE PD DQ7 DOUT
tDF
A0H
tOH
Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. 6. These waveforms are for the x16 mode.
Figure 9.
Program Operation Timings
tAH Addresses 5555H 2AAAH tAS CE tGHWL OE tWP WE tWPH tCS Data tDS VCC tVCS AAH 55H 80H AAH 55H 10H/30H tDH 5555H 5555H 2AAAH SA
20380B-17
Notes: 1. SA is the sector address for Sector Erase. Addresses = don't care for Chip Erase. 2. These waveforms are for the x16 mode.
Figure 10.
AC Waveforms Chip/Sector Erase Operations Am29F400AT/AM29F400AB 27
PRELIMINARY
SWITCHING WAVEFORMS
CE tCH tOE OE tOEH WE tDF
tCE
*
DQ7 DQ7
tOH DQ7= Valid Data High Z
tWHWH 1 or 2 DQ0-DQ6 DQ0-DQ6=Invalid DQ0-DQ6 Valid Data
20380B-18
Note: *DQ7=Valid Data (The device has completed the Embedded operation).
Figure 11.
AC Waveforms for Data Polling During Embedded Algorithm Operations
CE tOEH WE
OE
*
Data (DQ0-DQ7) DQ6=Toggle DQ6=Toggle tOE
20380B-19
DQ6= Stop Toggling
DQ0-DQ7 Valid
Note: *DQ6 stops toggling (The device has completed the Embedded operation).
Figure 12.
AC Waveforms for Toggle Bit During Embedded Algorithm Operations
28
Am29F400AT/AM29F400AB
PRELIMINARY
SWITCHING WAVEFORMS
CE The rising edge of the last WE signal WE Entire programming or erase operations
RY/BY tBUSY
20380B-20
5.0 V-only Flash
Figure 13.
RY/BY Timing Diagram During Program/Erase Operations
RESET
tRP tReady
20380B-21
Figure 14.
RESET Timing Diagram
Am29F400AT/AM29F400AB
29
PRELIMINARY
SWITCHING WAVEFORMS
CE
OE
BYTE
DQ0-DQ14
tELFL tELFH
Data Output (DQ0-DQ14)
Data Output (DQ0-DQ7)
DQ15/A-1
DQ15 Output tFLQZ
Address Input
20380B-22
Figure 15.
BYTE Timing Diagram for Read Operation
CE
The falling edge of the last WE signal WE
BYTE
tSET (tAS)
tHOLD (tAH)
20380B-23
Figure 16.
BYTE Timing Diagram for Write Operations
30
Am29F400AT/AM29F400AB
PRELIMINARY
Start
RESET = VID (Note 1)
Perform Erase or Program Operations
RESET = VIH
5.0 V-only Flash
Temporary Sector Group Unprotect Completed (Note 2)
20380B-24
Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again.
Figure 17.
Temporary Sector Unprotect Algorithm
5V RESET CE 12 V tVIDR
WE
Program or Erase Command Sequence RY/BY
20380B-25
Figure 18.
Temporary Sector Unprotect Timing Diagram
Am29F400AT/AM29F400AB
31
PRELIMINARY
AC CHARACTERISTICS Write/Erase/Program Operations
Alternate CE Controlled Writes
Parameter Symbols JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Standard Description tWC tAS tAH tDS tDH tOES tOEH tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tGHEL tWS tWH tCP tCPH tWHWH1 Write Cycle Time (Note 2) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read (Note 2) Output Enable Hold Time Toggle and Data Polling (Note 2) Min Min Min Min Min Min Min Min Min Min Min Min Min Byte Programming Operation Word Sector Erase Operation (Note 1) Max BYTE Switching Low to Output High Z (Note 2) Max 8 20 8 20 8 30 8 30 8 30 sec ns Typ Typ tWHWH2 tWHWH2 tFLQZ 14 1.0 14 1.0 14 1.0 14 1.0 14 1.0 Typ Speed Option (Notes 1 and 2) -65 60 0 45 30 0 0 0 10 0 0 0 35 20 7 -70 70 0 45 30 0 0 0 10 0 0 0 35 20 7 -90 90 0 45 45 0 0 0 10 0 0 0 45 20 7 -120 120 0 50 50 0 0 0 10 0 0 0 50 20 7 -150 150 0 50 50 0 0 0 10 0 0 0 50 20 7 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns s s sec
Read Recover Time Before Write WE Setup Time WE Hold Time CE Pulse Width CE Pulse Width High
Notes: 1. This does not include the preprogramming time. 2. Not 100% tested.
32
Am29F400AT/AM29F400AB
PRELIMINARY
SWITCHING WAVEFORMS
Data Polling Addresses 5555H tWC WE tGHEL OE tCP CE tWS Data tDS 5.0 Volt
20380B-26
PA tAS tAH
PA
tWHWH1
5.0 V-only Flash
tCPH tDH A0H PD DQ7 DOUT
Notes: 1. PA is address of the memory location to be programmed. 2. PD is data to be programmed at byte address. 3. DQ7 is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. 6. These waveforms are for the x16 mode.
Figure 19.
Alternate CE Controlled Program Operation Timings
ERASE AND PROGRAMMING PERFORMANCE
Limits Parameter Sector Erase Time Chip Erase Time Byte Programming Time Word Programming Time Chip Programming Time Typ (Note 1) 1.0 11 7 14 3.6 Max 8 88 300 (Note 3) 600 10.8 (Notes 3, 5) Unit sec sec s s sec Comments Excludes 00H programming prior to erasure Excludes 00H programming prior to erasure Excludes system-level overhead (Note 4) Excludes system-level overhead (Note 4) Excludes system-level overhead (Note 4)
Notes: 1. 25C, 5.0 V VCC, 100,000 cycles. 2. Although Embedded Algorithms allow for longer chip program and erase time, the actual time will be considerably less since bytes program or erase significantly faster than the worst case byte. 3. Under worst case condition of 90C, 4.5 V VCC, 100,000 cycles. 4. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure. 5. The Embedded Algorithms allow for 2.5 ms byte program time. DQ5 = "1" only after a byte takes the theoretical maximum time to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority of the bytes will program within one or two pulses. This is demonstrated by the Typical and Maximum Programming Times listed above.
Am29F400AT/AM29F400AB
33
PRELIMINARY
LATCHUP CHARACTERISTICS
Min Input Voltage with respect to VSS on all I/O pins VCC Current -1.0 V -100 mA Max VCC + 1.0 V +100 mA
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ 6 8.5 8 Max 7.5 12 10 Unit pF pF pF
Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz.
SO PIN CAPACITANCE
Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VPP = 0 Typ 6 8.5 8 Max 7.5 12 10 Unit pF pF pF
Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz.
DATA RETENTION
Parameter Minimum Pattern Data Retention Time 125C 20 Years Test Conditions 150C Min 10 Unit Years
34
Am29F400AT/AM29F400AB
PRELIMINARY
REVISION SUMMARY
Distinctive Characteristics:
Erase Suspend: Third paragraph, third sentence: Deleted the word "NOT." Operating Ranges:
High Performance: The fastest speed option available is now 60 ns. Enhanced power management for standby mode: Changed typical standby current to 1A.
General Description: First paragraph, first sentence should read, "...organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each." Added 60 ns speed option. Product Selector Guide: Added -65 column (60 ns, 5% VCC). Added -70 (70 ns, 10% VCC) and deleted -75 speed option. Ordering Information, Standard Products: The -65 speed option is now listed in the example.
VCC Supply Voltages: Added -65 and deleted -75 speed options in the list. Changed A9 maximum to +13.0 V.
DC Characteristics:
CMOS Compatible: Revised ICC specifications. Added Note 4 (refers to ICC3).
AC Characteristics:
Read Only Operations Characteristics: Added the -65 column and test conditions.
5.0 V-only Flash
Replaced -75 column with -70 column. Test Conditions, Figure 7: Changed speed option in first CL statement from -75 to -65. AC Characteristics:
Valid Combinations: Added -65 and -70, and deleted 75 speed options.
Tables 1 and 2, User Bus Operations: Corrected WE for read operations; was don't care (X), is now H. Standby Mode: Corrected standby mode current; was 100 A, is now 5 A. Table 5, Sector Address Tables (AM29F400AB): Corrected x16 starting address for SA5; was 1C000h, is now 28000h.
Write/Erase/Program Operations, Alternate CE Controlled Writes: Added the -65 column. Replaced -75 column with -70 column. Revised sector erase and programming specifications.
Erase and Programming Performance: Revised specifications in table. Clarified table and notes. Table 7, Command Definitions Revised Note 5 to cover all upper address bits that are don't care. Deleted Note 6.
Am29F400AT/AM29F400AB
35

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